A method for extracting TSV feature points based on optical micro-image

As the latest interconnect technology, Silicon (TSV, Through-Silicon-Via) is passed through chip and chip, wafer and wafer for vertical conduction, it greatly reduce the cable length and electrical signals delays, also improve the integration of electronic devices and electrical performance, as the latest 3D circuit integration technology, the TSV occupy a large area of the circuit compare to the entire size of the circuit board, so the TSV layout has become an important factor in the affecting the performance of the chip, How to propose an effective way to provide a basis for judging the layout of TSV has become a focus in the TSV current study. Based on considering the TSV small size and the high reflectance characteristics, we build the optical micro imaging system, based on optical microscopic images, this article present a method for extraction the TSV feature points, The method process the TSV micro-image with threshold segmentation; expansion corrosion and other preprocessing, then label the coordinates of connected components. By using the centroid method we extract the feature points coordinate, and the experiments results show that this method can be very good to meet the requirements of our experiments and extract the TSV feature points coordinates successfully, this work also make foundation for the TSV-based layout.