Design and evaluation of FinFET based digital circuits for high speed ICs

The Delay and Speed plays a complementary role in ICs, as the delay decreases the speed increases and vice-versa. The scaling of MOSFETs has resulted in reduction in size of ICs. As we scale down to nanometer regime, the Short Channel Effects (SCEs) of MOSFET affects the system performance and reliability. Here in this paper we discuss on FinFET, which is an alternate MOSFET, through which the SCEs are reduced. The performance analysis of FinFET based digital applications such as inverter circuit, NAND and NOR gates at 22nm and 14nm technology nodes is also discussed. The simulations are done using HSPICE. The results obtained for delay, average power dissipation and total power dissipation are so promising that FinFET will be an alternative to traditional MOSFET´s issues. The noise margin calculation of FinFET based Inverter circuit at 22nm and 14nm is also discussed.