Design and Process control of Siemens polysilicon CVD reactor

The novelty in this paper is to develop a process control for the poly-silicon CVD reactor to achieve optimum productivity of Poly-silicon seed by controlling the process parameters. The production of ingot is done through Siemens process of decomposing Trichlorosilane by Chemical Vapor Deposition on slim tungsten rods. The hardware architecture proposed monitors and controls the systematic sequential stages furnishing dynamics of the plant at a high temperature around 1050°C-1100°C. The HMI communicates through NI´s LabVIEW 8.6 package, alarming the user with Process mimic, Report generation, Data and Security management. The plant simulation is realized and verified with LabVIEW 8.6 Version and MATLab 7.5 software tools to obtain the effectiveness of proposed control technique. This GUI based SCADA handles likelihood of fault tolerance, ensuring risk controlled process with optimum productivity of poly-silicon by making system compliant to Industrial standards.