Analytical modeling of J-V characteristics of CIGS based thin film solar cell considering voltage and space dependent electric field in the absorber layer

This paper focuses on developing an analytical model to analyze the current-voltage (J-V) characteristics of lightly doped CIGS-based thin film solar cell considering the series resistance and the voltage-space dependent electric field in the absorber layer. The mathematical intractability evolved for these considerations has been resolved by employing the concept of perturbation theory. Effects of various parameters such as intensity of light, electron lifetime and hole lifetime have been investigated using the developed model. Simulation results show that the proposed model is helpful in providing better physical insight.