The alleviation of low power Schmitt trigger using FinFET technology

In this paper, we designed Schmitt trigger using CMOS low power design technique at 45nm technology. With the advancement of technology, different parameters have been calculated and analyzed to determine the performance of the circuit. With the change in technology, the aspect ratio of transistor sizing, variation in parameters also takes place. Different techniques are applied for the reduction in power consumption at the trade off with delay and area. In this paper we use novel FinFET technique to decrease the leakage power in the circuit. Schmitt trigger is a positive feedback amplifier that converts any continuous time varying signal to pulse wave. It forms the comparator of modern analog to digital convertor circuits, and it provides good noise immunity, thus it is used in communication. Parameters like slew rate, propagation delay, energy delay product etc of the circuit are calculated in both CMOS and FinFET technique and compared. Leakage power obtained using FinFET is 12.08PW which is very less to that of bulk CMOS. Designing is done with variable voltage supply and the performance of the circuit is observed at different points. The circuit is simulated in Cadence virtuoso tool version 6.1 output of all is compared.