Hot electron energy analysis using a high-speed Monte Carlo simulation

Although device simulation techniques allow us to predict electrical characteristics which agree well with experimental results, hot carrier analysis is one of the important studies left for researchers. Monte Carlo simulation, based on precise physical mechanism, provides us the best solution for this problem. This method may be, however, impractical for engineers, because of the great amount of CPU time consumption for increasing high electric field cases. In this study, a new type of free-flight optimization technique has been developed to reduce the CPU time by mere than one order. Based on rigorous treatment of carrier scattering processes especially for impact ionization, the hot carrier effect of MOSFET is investigated in detail from the viewpoint of temperature and energy distribution.