DocumentCode
3779725
Title
A 7GHz PNP transistor for complementary bipolar LSI
Author
Chikara Yamaguchi;Yoshiji Kobayashi;Tetsushi Sakai
Author_Institution
NTT Electrical Communications Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Japan, 243-01
fYear
1987
fDate
5/1/1987 12:00:00 AM
Firstpage
39
Lastpage
40
Abstract
Recently a complementary bipolar transistor LSI´s have been investigated. These LSI´s concept features high speed switching and low power dissipation. However the speed has been considerably limited by the low performance of the integrated PNP transistor. This paper describes the fabrication results of a 7GHz vertical PNP transistor and its integrated logic circuits. By the presented process called SST4, the vertical PNP and NPN transistor can be fabricated on one chip. Measured propagation delay time is reached in 270ps/gate with power dissipation of 400μw.
Keywords
"Transistors","Large scale integration","Propagation delay","Silicon","Optical switches","Power dissipation"
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. SymVLSITech 1987. Symposium on
Print_ISBN
978-1-5090-3151-1
Type
conf
Filename
7508751
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