• DocumentCode
    3779733
  • Title

    The use of CoSi2 as compared to TiSi2 for a self-aligned silicide technology

  • Author

    L. Van den hove;R. Woiters;K. Maex;R. De Keersmaecker;G. Declerck

  • Author_Institution
    IMEC, Kapeldreef 75, B-3030 leuven, Belgium
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    67
  • Lastpage
    68
  • Abstract
    Self-aligned silicidation technologies to form a silicide on source/drain and gate regions of MOS devices are receiving increasing interest to reduce the poly-Si line resistance, the contact resistance and the sheet resistance of the diffusion regions, TiSi2 is by far the most widely accepted material for this technology [1]. The aim of this paper is to compare CoSi2 and TiSi2 with respect to various materials/processing aspects and electrical characteristics.
  • Keywords
    "Silicides","Silicon","Stress","Silicidation","Titanium compounds","Resistance","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779733