Title :
Enhancement of IC tray´s surface conductivity using accelerator technology
Author :
Lee, J.S. ; Kil, J.K. ; Ha, J.H. ; Lee, J.H. ; Choi, B.H.
Author_Institution :
Korea Atomic Energy Research Institute, Taejon, South Korea
Abstract :
We designed and manufactured a high current ion source for ion beam applications. As an industrial application, we studied the relation between bombarding nitrogen fluence and surface resistivity on MPPO (modified polyphenylene oxide) material, which is used for the IC tray, using the high current ion implantation technology. During the transportation, electrical charge is induced on the tray surface and it generates an electrical shock into the IC chip. To prevent such damage, we developed an implantation process for IC tray surface modification, which was carried out at an accelerating energy of 50 keV and an ion beam current of 50 mA. The surface resistivity of the MPPO IC tray that is normally insulating was decreased in the range of 1012 to 106 Ω/sq by increasing the total dose from 7×10 14 ions/cm2 to 8×1016 ions/cm2
Keywords :
integrated circuit packaging; integrated circuit technology; ion beam applications; ion implantation; polymers; surface charging; surface conductivity; surface treatment; 50 keV; 50 mA; IC tray; MPPO; N ion fluence; N ion total dose dependence; accelerating energy; accelerator technology; high current ion source; implantation process; industrial application; ion beam applications; ion beam current; modified polyphenylene oxide; surface conductivity; surface modification; Acceleration; Application specific integrated circuits; Conducting materials; Conductivity; Industrial relations; Ion accelerators; Ion beam applications; Ion sources; Manufacturing industries; Nitrogen;
Conference_Titel :
Particle Accelerator Conference, 2001. PAC 2001. Proceedings of the 2001
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-7191-7
DOI :
10.1109/PAC.2001.987911
