Field isolation process for submicron CMOS

In this paper we present a complete process for field isolation applicable in a submicron CMOS process as will be needed for future VLSI. A new LOCOS field oxide scheme is presented, that results in a bird´s beak free and defect free planarised field oxide. The obvious advantage of the new process is the process simplicity and controllability. It has been demonstrated that employing high energy implantations after field oxide formation results in extremely small narrow-width effects. The results demonstrate the feasibility of the process for submicron CMOS.