• DocumentCode
    3779745
  • Title

    Experimental characterization of α-induced charge collection mechanism for megabit DRAM cells

  • Author

    K- Takeuchi;K. Shimohigashi;E. Takeda;E. Yamasaki;T. Toyabe;K. Itoh

  • Author_Institution
    Central Research Laboratory> Hitachi Ltd, Kokubunji, Tokyo 185, Japan
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    The α-particle induced soft errors in DRAM´s have become a major problem in reducing memory cell sizes. Intensive efforts have been made for studying charge collection mechanisms, diffusion and funneling. However. it is not clear yet how these mechanisms contribute to the critical charge QC of various cell sizes quantitatively.
  • Keywords
    "Random access memory","Charge measurement","Timing","Very large scale integration","Solid modeling","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779745