• DocumentCode
    3779752
  • Title

    Formation of Si-on-insulator structure by lateral solid phase epitaxial growth with local P-doping

  • Author

    M. Moniwa;M. Miyao;T. Warabisako;K. Kusukawa;E. Murakami;S. Shukuri

  • Author_Institution
    Central Research Laboratory. Hitachi Ltd., Kokubunj i. Tokyo 185. Japan
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    A low temperature process for silicon-on-insulator (SOI) formation is essential to realize future 3-dimonsional large scale Integrated circuit (LSI). For this purpose, lateral solid phase epitaxial growth (L-SPE) in deposited amorphous Si (a-Si) films on SiO2 has been studied recently. However, the L-SPE growth Is limited to a few μm from the seeding-area. Doping of a-Si with P atoms increased the L-SPE length to a maximum of 40 μm1). However. SOI with a high P uoncentration is not suitable to be used as a substrate for active device fabrication.
  • Keywords
    "Annealing","Stress","Silicon","Films","Doping","Substrates","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779752