A trench isolation technology for high-speed and low-power dissipation bipolar LSI´s

Several self-aligned bipolar technologies have been developed to achieve high-speed and low-power dissipation bipolar LSI´s (1×2×3). These technologies reduce collector-base capacitance and extrinsic base resistance. In order to realize much high-speed bipolar LSI performance, it is necessary to reduce collector-substrate capacitance and wiring capacitance simultaneously, although it is rather difficult. In, this paper, we propose a new trench isolation technology to realize high-speed and low-power dissipation bipolar VLSI´s. By this isolation technology, both deep grooves and shallow grooves can be filled with a thick CVD-SiO₂ film. The thick CVD-SiO₂ film reduces collector-substrate capacitance and wiring capacitance simultaneously. Characteristics of bipolar device fabricated by using this technology are described.