• DocumentCode
    3779919
  • Title

    Design of a 2.8 W S-band power amplifier using load pull measurement

  • Author

    Ashish Jindal;Umakant Goyal;S K Tomar;Meena Mishra;Seema Vinayak

  • Author_Institution
    Solid State Physics Laboratory, DRDO, Delhi, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, SSPL GaN-HEMT based S-band (2.0 to 2.2 GHz) power amplifier design, fabrication, assembly and RF measurement results have been discussed. Designed single stage power amplifier is providing optimized performance over desired band with 15dB small signal gain and 2.8 W (P-1dB) CW power output with 57 % PAE. The design is based on the load pull measurement data and small signal S-parameters. Extensive load pull measurement and Co-EM simulation have been carried out for designing this circuit.
  • Keywords
    "Power amplifiers","Power measurement","Scattering parameters","Gallium nitride","HEMTs","Impedance","Power generation"
  • Publisher
    ieee
  • Conference_Titel
    Applied Electromagnetics Conference (AEMC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/AEMC.2015.7509176
  • Filename
    7509176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779919