• DocumentCode
    3780360
  • Title

    Design of DRAM having dummy cell sensing structure

  • Author

    Sunil kumar Ojha;O.P. Singh;G.R. Mishra;P.R. Vaya

  • Author_Institution
    Department of ECE, Amity University Lucknow Campus, India
  • fYear
    2015
  • Firstpage
    234
  • Lastpage
    236
  • Abstract
    A novel DRAM with dummy cell structure is designed using reference voltage for the fast sensing operation. The voltage level for sensing the data bit is also reduced. This design is analyzed using 90nm process technology and HSPICE simulator.
  • Keywords
    "Random access memory","Substrates","Sensors"
  • Publisher
    ieee
  • Conference_Titel
    Recent Advances in Electronics & Computer Engineering (RAECE), 2015 National Conference on
  • Type

    conf

  • DOI
    10.1109/RAECE.2015.7510196
  • Filename
    7510196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3780360