On the transient physics characteristics of PIN diode applied with microwave electromagnetic pulses

In order to study the damage mechanism of PIN diode limiter induced by microwave pulse, basic semiconductor equations based on drift-diffusion model and two-dimensional finite element simulation method were employed to study PIN diode´s electric field distribution, carrier concentration and lattice temperature changes under the effect of 2GHz high power microwave. Analysis showed that when it reaches the breakdown threshold, avalanche occurs first in region of the I layer close to the P-I junction. After the avalanche occurs, the electric field magnitude in the I layer declined rapidly. Peak-value electric field appeared separately at the P-I junction and the I-N junction, and these two positions is great point lattice temperature. In the positive half cycle of the microwave pulse, maximum temperature point appears in the center area of I layer. No matter breakdown caused by the negative pulse or injection of a large number of carriers caused by positive pulse, they are both likely to lead to the emergence of PIN diode´s permanent physical damage.