• DocumentCode
    3780566
  • Title

    The research and design of Anti-radiation CMOS integrated circuits

  • Author

    Yuan Zhao;Lixin Xu

  • Author_Institution
    Beijing Institute of technology, CAST, CHINA
  • fYear
    2015
  • Firstpage
    669
  • Lastpage
    673
  • Abstract
    In this essay, the characteristics and effects of CMOS integrated circuit on spacecraft is analyzed in the radiation environment. Based on the generation of radiation effect, the main anti-radiation design method is introduced in the CMOS integrated circuit area on designing and processing. In the outer space, there is prone to be CMOS semiconductor components of threshold voltage deviation, transdiode decreasing, substrate leakage current increasing and corner noise amplitude increasing in the CMOS integrated circuit. As a result, there are 2 measures proposed to protect against radiation of the integrated circuits. Anti-radiation CMOS integrated circuit and Anti-radiation Layout. Accordingly, testing result of anti-radiation LNA chips, the designed anti-radiation CMOS integrated circuits obtain the ideal effect in anti-radiation function.
  • Keywords
    "CMOS integrated circuits","Reliability","Lead"
  • Publisher
    ieee
  • Conference_Titel
    Microwave, Antenna, Propagation, and EMC Technologies (MAPE), 2015 IEEE 6th International Symposium on
  • Type

    conf

  • DOI
    10.1109/MAPE.2015.7510407
  • Filename
    7510407