• DocumentCode
    3780587
  • Title

    Parameters analysis of Gaussian pulse circuit based on avalanche transistors

  • Author

    Dongxiao Li;Xu Yang

  • Author_Institution
    EMC Laboratory, Beihang University, Beijing, China
  • fYear
    2015
  • Firstpage
    764
  • Lastpage
    768
  • Abstract
    Marx circuit based on avalanche transistors could be used to produce high power-nanosecond-Gaussian pulse. In this paper, theoretical calculations and software simulation of circuit parameters on the impact of the pulse waveform parameters are analyzed. The results show us that the charging voltage mainly affect amplitude and rise time of the pulse generated, the charging capacitor mainly impact the amplitude and fall time of the pulse, charging resistors could limit the maximum pulse repetition frequency. This paper provides a theoretical reference for the selection of components in the design of pulse source circuit and the researches of adjustable Gaussian pulse source.
  • Keywords
    "Transistors","Tin"
  • Publisher
    ieee
  • Conference_Titel
    Microwave, Antenna, Propagation, and EMC Technologies (MAPE), 2015 IEEE 6th International Symposium on
  • Type

    conf

  • DOI
    10.1109/MAPE.2015.7510428
  • Filename
    7510428