DocumentCode :
3780890
Title :
The behavior of holes and electrons in semiconductors
Author :
W. Shockley
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
fYear :
1950
Firstpage :
74
Lastpage :
75
Abstract :
“Holes” and “electrons” are words used to describe the two processes by which electrons carry current in semiconductors like silicon and germanium. These two processes, although prominent in theory for the last two decades, have acquired much greater reality as a result of new experiments stemming from the invention of the transistor. In fact a new engineering science, referred to as transistor electronics, is now being built about the behavior of holes and electrons.
Keywords :
"Charge carrier processes","Germanium","Crystals","Antimony","Lattices","Conductivity","Gallium"
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 1950 Conference On
Print_ISBN :
978-1-5090-3127-6
Type :
conf
DOI :
10.1109/CEI.1950.7513613
Filename :
7513613
Link To Document :
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