• DocumentCode
    3780890
  • Title

    The behavior of holes and electrons in semiconductors

  • Author

    W. Shockley

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill, N. J.
  • fYear
    1950
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    “Holes” and “electrons” are words used to describe the two processes by which electrons carry current in semiconductors like silicon and germanium. These two processes, although prominent in theory for the last two decades, have acquired much greater reality as a result of new experiments stemming from the invention of the transistor. In fact a new engineering science, referred to as transistor electronics, is now being built about the behavior of holes and electrons.
  • Keywords
    "Charge carrier processes","Germanium","Crystals","Antimony","Lattices","Conductivity","Gallium"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation, 1950 Conference On
  • Print_ISBN
    978-1-5090-3127-6
  • Type

    conf

  • DOI
    10.1109/CEI.1950.7513613
  • Filename
    7513613