DocumentCode
3780890
Title
The behavior of holes and electrons in semiconductors
Author
W. Shockley
Author_Institution
Bell Telephone Laboratories, Murray Hill, N. J.
fYear
1950
Firstpage
74
Lastpage
75
Abstract
“Holes” and “electrons” are words used to describe the two processes by which electrons carry current in semiconductors like silicon and germanium. These two processes, although prominent in theory for the last two decades, have acquired much greater reality as a result of new experiments stemming from the invention of the transistor. In fact a new engineering science, referred to as transistor electronics, is now being built about the behavior of holes and electrons.
Keywords
"Charge carrier processes","Germanium","Crystals","Antimony","Lattices","Conductivity","Gallium"
Publisher
ieee
Conference_Titel
Electrical Insulation, 1950 Conference On
Print_ISBN
978-1-5090-3127-6
Type
conf
DOI
10.1109/CEI.1950.7513613
Filename
7513613
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