• DocumentCode
    3781197
  • Title

    Overshoot stress impact on HfO2 high-κ layer dynamic SILC

  • Author

    Guangxing Wan;Tianli Duan;Shuxiang Zhang;Lingli Jiang;Bo Tang;Chao Zhao;Huilong Zhu;HongYu Yu

  • Author_Institution
    South University of Science and Technology of China, Shenzhen 518055, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO2 (EOT~0.8 nm) high-κ layer are investigated, which reveals that overshoot is of great concern to high-κ layer leakage current. The D-SILC is correlated with traps generation which is dependent on stress input and release. A degradation model based on the oxygen vacancies is provided to understand the above mentioned phenomena.
  • Keywords
    "Stress","Logic gates","Hafnium compounds","Degradation","Stress measurement","Inverters","Capacitance"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7516943
  • Filename
    7516943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3781197