Title :
A 30-GHz to 39-GHz mm-Wave low-power injection-locked frequency divider in 65nm CMOS
Author :
Guangyao Zhou;Shunli Ma;Fazhi An;Ning Li;Fan Ye;Junyan Ren
Author_Institution :
State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, China
Abstract :
In this paper, a wide locking range and low power Injection-Locked Frequency Divider (ILFD) is presented. Compared to conventional structure, 2-b digital controlled capacitor array is introduced to extend its locking range. Meanwhile, the tail current source is eliminated to reduce the supply voltage and enlarge the output voltage swing. The post-simulations show that the total locking-range is from 29.7GHz to 39.2GHz when input power is 0dBm. While operating at highest frequency band, the output power is 1.3dBm, and phase noise at 1-MHz offset are -156.9dBc/Hz. The divider core draws a RMS current of 8.5mA under a supply voltage of 0.65V. The total divider with 50Ω output buffer takes up 540μm×205μm without probe pad in TSMC 65-nm CMOS process.
Keywords :
"Frequency conversion","Phase noise","Layout","Capacitors","Q-factor","Capacitance"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7516965