• DocumentCode
    3781233
  • Title

    Design of a high voltage gate driver module

  • Author

    Longcheng Que;Jian Lv;Simon S. Ang

  • Author_Institution
    University of Electronic Science and Technology of China, Chengdu, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High voltage power MOSFET or IGBT requires a high-voltage gate driver. In this paper, a high voltage gate driver module to drive both the high-side and low-side switching power devices is designed. Both the total volume and parasitic inductance effects of the driver module are decreased considerably compared to the conventional approach of using two packaged single driver chips. A module package is designed and simulated. Two applications are proposed and their typical switching waveforms are simulated.
  • Keywords
    "Logic gates","MOSFET","Power supplies","Delays","Voltage control","Switches"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7516991
  • Filename
    7516991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3781233