• DocumentCode
    3781267
  • Title

    An experimental study on the potential use of ReRAM as SSD buffer

  • Author

    Mengnan Wu;Yang Yang;Liangliang Dai;Xinxin Zhang;Hongbin Sun;Ruizhi Zhang;Jianxiao Wang;Nanning Zheng

  • Author_Institution
    School of Electronic and Information Engineering, Xi´an Jiaotong University, Xi´an, Shaanxi 710049, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As ReRAM can provide great scalability, high density and fast access latency, it is promising to replace DRAM with ReRAM as SSD buffer. Nevertheless, compared with DRAM, ReRAM is much slower and has limited endurance. This paper makes the first experimental study to evaluate the potential performance and endurance challenges for ReRAM-based SSD buffer design. Evaluation results demonstrate that, compared with DRAM-based buffer, the use of ReRAM-based buffer can reduce the average access latency of SSD by up to 27%. In addition, the ReRAM endurance of 1010 can at least guarantee a more than 20 years raw lifetime for SSD buffer design.
  • Keywords
    "Random access memory","Flash memories","Buffer storage","Nonvolatile memory","Benchmark testing","Computer architecture","Scalability"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7517039
  • Filename
    7517039