• DocumentCode
    3781302
  • Title

    Dual band power amplifier for handset application

  • Author

    Jie Jin;Xuguang Zhang;Xiaoxiao Jiang;Yiyuan Fang

  • Author_Institution
    Shanghai University of Engineering Science, Shanghai 201620, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The paper makes use of the wideband design technique and linear bias circuit to design a dual band power amplifier(PA) for TD-SCDMA. The PA is taped out in the 2μm InGaP/GaAs HBT process and verified in the evaluation board by the QPSK modulated stimulus with a chip rate of 1.28Mcps in 2.0 GHz. The measured result shows that the power gain, linear output power and power added efficiency are respectively 27dB, 28dBm and 39% with the adjacent channel power ratio of -33.08dBc in offset ± 1.6MHz.
  • Keywords
    "Power amplifiers","Time division synchronous code division multiple access","Wideband","Heterojunction bipolar transistors","Power generation","Impedance matching","CMOS integrated circuits"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7517084
  • Filename
    7517084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3781302