Title :
Self-recovering short-circuit protection circuit for RF class-D power amplifier
Author :
Sun Zheng;Ding Wei;Xu Yong;Huang Ying;Ma Guangyan;Wu Yuanliang
Author_Institution :
Institute of Communication Engineering, PLA UST, Nanjing, 210007, China
Abstract :
The paper presents a self-recovering short-circuit protection circuit for RF class-D power amplifier whose output is connected to a 50Ohm load in 24V power supply. The circuit can make the output MOS power transistors shut down quickly when short-circuit occurs. Moreover, those transistors also can be voluntarily started-up again once short-circuit disappears. Fabricated in CSMC 0.25μm enhance BCDMOS process, the circuit can work stably and accurately under all kinds of short-circuit condition. The analysis and design methods discussed in this paper can provide beneficial references for other kinds of chip about short-circuit protection technological.
Keywords :
"Power amplifiers","Detectors","MOS devices","Power supplies","Radio frequency","Transistors","Logic gates"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517122