• DocumentCode
    3781346
  • Title

    A new intrinsic parameter extraction approach for small-signal model of AlGaN/GaN devices

  • Author

    Linghan Zhang;Yunzhou Wang;Yicong Liu;Xusheng Tang

  • Author_Institution
    School of Information Science and Engineering, Southeast University, Nanjing 211100, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, a new intrinsic parameter extraction approach for small-signal model of AlGaN/GaN device is presented. This approach applies approximation and iteration to extract intrinsic parameters. This improved approach is reliable and accurate, and the simulation of the determined small-signal equitable circuit fits the measurement perfectly up to 40 GHz.
  • Keywords
    "Mathematical model","Integrated circuit modeling","Parameter extraction","HEMTs","Aluminum gallium nitride","Wide band gap semiconductors","Fitting"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7517150
  • Filename
    7517150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3781346