Title :
A novel SCR-LDMOS for high voltage ESD protection
Author :
Deng Jing;Chen Xingbi
Author_Institution :
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract :
A novel SCR-LDMOS structure is presented and discussed. The proposed device combines the features of the conventional LDMOS and SCR-LDMOS, resulting in an improved ESD protection capability for high voltage application. Simulated TLP results show that the proposed structure with 40 μm width and 0.1 mA external injection current exhibits a 86 V trigger voltage and a 31 V holding voltage. ESD characteristics of the proposed device can be adjusted to different applications by altering the value of the external injection current and the length of the SDT (Spacing between Drain and Trigger). Moreover, the process of the proposed device is compatible with the stand CMOS process.
Keywords :
"Electrostatic discharges","Electrodes","Transistors","Junctions","Thyristors","CMOS process","Robustness"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517155
