DocumentCode
3781351
Title
Design consideration of uni-traveling carrier photodiode: Influence of doping profile and buffer layer
Author
Yang Li;Hang Zhou;Pengfei Xu;Yujie Chen;Yanfeng Zhang;Siyuan Yu
Author_Institution
The School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
fYear
2015
Firstpage
1
Lastpage
4
Abstract
Device modeling of InGaAs-InP-based uni-traveling carrier photodiode (UTC-PD) were performed in order to reveal the key parameters which affect the high speed performance of UTC-PD. Our simulations got 3dB bandwidth of 12.66GHz without interface effects and 3.59GHz with interface effects, respectively. On the other hand, step doping profile got a 3dB bandwidth of 21.4GHz, which is about 1.8 times larger than that of uniform doping. These indicate that both doping profile in the absorption layer and the defect at the interfacial buffer layer have remarkable influence on the performance of UTC-PD.
Keywords
"Bandwidth","Absorption","Doping profiles","Buffer layers","Indium gallium arsenide","Semiconductor process modeling","Photodiodes"
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN
978-1-4799-8483-1
Electronic_ISBN
2162-755X
Type
conf
DOI
10.1109/ASICON.2015.7517156
Filename
7517156
Link To Document