Title :
5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect
Author :
Dainesi, P. ; Thevanaz, L. ; Robert, Ph
Author_Institution :
EPFL, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed.
Keywords :
optical crosstalk; optical dispersion; optical switches; semiconductor plasma; silicon-on-insulator; 1300 nm; 1550 nm; 5 MHz; Mach-Zehnder interferometer principle; SOI switch; Si; crosstalk; extinction ratio; insertion loss; optical switch; optoelectronic devices; plasma dispersion effect; silicon on insulator technology; Crosstalk; Dispersion; Extinction ratio; Insertion loss; Loss measurement; Optical losses; Optical switches; Plasma measurements; Silicon on insulator technology; Switching frequency;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.988852
