Title :
Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication
Author :
F. Dubecky;J. Darmo;M. Krempasky;V. Necas;P.G. Pelfer;P. Bohacek;M. Sekacova
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
Study of selected physical properties of bulk semi-insulating (SI) GaAs grown by LEC and VGF techniques, undoped and Cr-doped is presented. Conductivity, Hall, GDMS, I-V and C-V techniques were used for material and radiation detector characterisation. Detection performances of detectors have been tested using /sup 57/Co source of 122 keV gamma rays. Correlation between the physical properties of base materials and performances of detectors is presented. Physical parameters suitable for estimation of the detector grade bulk SI GaAs are discussed.
Keywords :
"Gallium arsenide","Conducting materials","Gamma ray detection","Gamma ray detectors","Gas detectors","Conductivity","Capacitance-voltage characteristics","Radiation detectors","Performance evaluation","Testing"
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785096
