• DocumentCode
    3782256
  • Title

    Study of key physical parameters of bulk semi-insulating GaAs for radiation detector fabrication

  • Author

    F. Dubecky;J. Darmo;M. Krempasky;V. Necas;P.G. Pelfer;P. Bohacek;M. Sekacova

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
  • fYear
    1998
  • Firstpage
    149
  • Lastpage
    152
  • Abstract
    Study of selected physical properties of bulk semi-insulating (SI) GaAs grown by LEC and VGF techniques, undoped and Cr-doped is presented. Conductivity, Hall, GDMS, I-V and C-V techniques were used for material and radiation detector characterisation. Detection performances of detectors have been tested using /sup 57/Co source of 122 keV gamma rays. Correlation between the physical properties of base materials and performances of detectors is presented. Physical parameters suitable for estimation of the detector grade bulk SI GaAs are discussed.
  • Keywords
    "Gallium arsenide","Conducting materials","Gamma ray detection","Gamma ray detectors","Gas detectors","Conductivity","Capacitance-voltage characteristics","Radiation detectors","Performance evaluation","Testing"
  • Publisher
    ieee
  • Conference_Titel
    Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
  • Print_ISBN
    0-7803-4354-9
  • Type

    conf

  • DOI
    10.1109/SIM.1998.785096
  • Filename
    785096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782256