Title :
Be-related traps in Al/sub 0.5/Ga/sub 0.5/As MBE layers
Author :
J. Szatkowski;E. Placzek-Popko;K. Sieranski;O.P. Hansen
Author_Institution :
Inst. of Phys., Tech. Univ. Wroclaw, Poland
Abstract :
In this paper we report on studies of deep levels in Be doped Al/sub 0.5/Ga/sub 0.5/As by deep level transient spectroscopy measurements. The aim of the studies was to investigate which of the observed hole traps may be Be related. For this purpose samples of four different Be concentrations ranging from 10/sup 15/ cm/sup -3/ to 10/sup 18/ cm/sup -3/ were prepared. For the samples of the highest Be concentration the DLTS measurements reveal the presence of four hole traps whereas in the others six traps are observed. Four of the observed traps can be attributed to Be incorporation.
Keywords :
"Molecular beam epitaxial growth","Spectroscopy","Frequency","Temperature measurement","Effective mass","Gallium arsenide","Substrates","Alloying","Ohmic contacts","Schottky barriers"
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785100
