DocumentCode
3782258
Title
Degradation mechanisms in GaN/AlaN/InGaN LEDs and LDs
Author
D.L. Barton;M. Osinski
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1998
Firstpage
259
Lastpage
262
Abstract
Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to spring 1994. Following the initial studies of rapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number of Nichia NLPB-500 LEDs on a series of life tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23/spl deg/C). As no noticeable degradation was observed, a second 23/spl deg/C test was performed with the same devices but with a range of currents between 20 and 70 mA. For subsequent tests, the temperature was increased by 10/spl deg/C in 500 h intervals up to a final temperature of 95/spl deg/C using the same currents applied in the second test. This work presents a thermal degradation mechanism that dominates degradation at high ambient temperatures.
Keywords
"Gallium nitride","Aluminum gallium nitride","Light emitting diodes","Temperature","Thermal degradation","Life testing","Plastics","Ovens","Laboratories","Springs"
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785120
Filename
785120
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