• DocumentCode
    3782673
  • Title

    Mesh structure adjustment in 2D simulation of VLSI super self-aligned Si bipolar transistor

  • Author

    T. Suligoj;P. Biljanovic

  • Author_Institution
    Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
  • Volume
    2
  • fYear
    1999
  • Firstpage
    1167
  • Abstract
    The fabrication process of a high-speed, deep-trench, double polysilicon super-self-aligned silicon bipolar transistor is simulated by a 2D simulation program, assuming 0.25 /spl mu/m design rules. The effect of the simulation mesh on the doping profiles of intrinsic and extrinsic transistor, deposited layers and electrical characteristics are analyzed.
  • Keywords
    "Very large scale integration","Bipolar transistors","Computational modeling","Doping profiles","Fabrication","Etching","Electric variables","Semiconductor process modeling","Resists","Analytical models"
  • Publisher
    ieee
  • Conference_Titel
    Africon, 1999 IEEE
  • Print_ISBN
    0-7803-5546-6
  • Type

    conf

  • DOI
    10.1109/AFRCON.1999.821944
  • Filename
    821944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782673