• DocumentCode
    378281
  • Title

    Multi rate timing extraction using optical injection locking of a self oscillating InGaAs/InP heterojunction bipolar photo-transistor

  • Author

    Lasri, J. ; Dahan, D. ; Eisenstein, G. ; Ritter, D.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    4
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    510
  • Abstract
    We demonstrate direct optical injection locking in a self oscillating InGaAs/InP heterojunction bipolar photo-transistor for timing extraction at multiple bit rates. One oscillator is used for 10 to 40 Gbit/s signals.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; injection locked oscillators; optical communication equipment; phototransistors; synchronisation; 10 to 40 Gbit/s; InGaAs-InP; multi rate timing extraction; optical injection locking; oscillator; self oscillating InGaAs/InP heterojunction bipolar photo-transistor; Indium gallium arsenide; Indium phosphide; Injection-locked oscillators; Nonlinear optics; Optical attenuators; Optical filters; Optical receivers; Optical transmitters; Stimulated emission; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2001. ECOC '01. 27th European Conference on
  • Print_ISBN
    0-7803-6705-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2001.989083
  • Filename
    989083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=378281