Carrier recombination at grain boundary and Fermi level in polysilicon films under optical illumination

In this paper, it will be analyzed the recombination of carriers at grain boundary in polysilicon films under optical illumination and it´s effect to the depletion of polysilicon grains. It will be shown that the recombination at grain boundary in totally depleted grains is different from those found in partially depleted grains. The critical dopant concentrations for totally depletion of grain under optical illumination as function of grain size and temperature are calculated. Also, the calculated dependencies of the barrier height at grain boundary and Fermi quasi levels vs. dopant concentration for different illumination level are presented and analyzed.