Post-irradiation behavior of commercial power VDMOSFETs

This paper presents results of a study of post-irradiation behavior of commercial n-channel power VDMOSFETs. Gamma-ray irradiated transistors have been subjected to the series of isothermal and isochronal annealings. The response of EFL1N10 devices, manufactured by domestic vendor, Ei-Microelectronics, is compared to that of Intersil´s IRF510 devices. It has been found that during isothermal annealing EFL1N10 devices exhibit the so called latent interface-trap buildup (LITB), while such phenomenon hasn´t been observed in IRF510. Additional switching temperature annealing and switching bias annealing experiments performed on EFL1N10 may prove useful in revealing details of LITB.