• DocumentCode
    3782858
  • Title

    Power VDMOS transistors response to lowered temperature conditions

  • Author

    S. Djoric-Veljkovic;S. Golubovic;V. Davidovic;N. Stojadinovic

  • Author_Institution
    Fac. of Technol., Nis Univ., Serbia
  • Volume
    1
  • fYear
    2000
  • Firstpage
    383
  • Abstract
    In this paper the results of investigation of lowered temperature effects on commercial n-channel power VDMOS transistors are presented. It is found that electrical parameters, threshold voltage and gain factor, of the transistors subjected to lowered temperature are generally improved.
  • Keywords
    "Temperature","Threshold voltage","Cooling","MOSFETs","Microelectronics","Electronic equipment testing","Performance evaluation","Solid state circuits","Physics","Nitrogen"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840595
  • Filename
    840595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782858