• DocumentCode
    3782954
  • Title

    The monolithic bidirectional switch (MBS)

  • Author

    F. Heinke;R. Sittig

  • Author_Institution
    Inst. fur Elektrophys., Tech. Univ. Braunschweig, Germany
  • fYear
    2000
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    A new power semiconductor device is introduced which facilitates bidirectional operation. Numerical simulations predict excellent stationary characteristics up to high temperatures. Moreover under all operation conditions the device allows one to adjust the distribution of the electron hole plasma. For instance during turn-off it is possible to control the rate of current decay and the corresponding overvoltage peak.
  • Keywords
    "Charge carrier processes","Voltage control","Silicon","Breakdown voltage","Plasma temperature","Electrodes","Power semiconductor switches","Power semiconductor devices","Plasma properties","Plasma devices"
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856815
  • Filename
    856815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782954