Title :
High-efficiency pin photo-diodes with a spot-size converter for 40 Gb/s transmission systems
Author :
Yasuoka, N. ; Makiuchi, M. ; Miyata, M. ; Aoki, O. ; Ekawa, M. ; Okazaki, N. ; Takechi, M. ; Kuwatsuka, H. ; Soda, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
InP-InGaAs PIN photodiodes with a polarisation-insensitive spot-size converter have been fabricated. High quantum efficiency of 64%, low polarisation-dependence ratio of 0.22 dB and high-speed characteristics at 40 Gb/s have been ensured.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical receivers; p-i-n photodiodes; 40 Gbit/s; 64 percent; InP-InGaAs; PIN photodiodes; high quantum efficiency; high-speed characteristics; low polarisation-dependence ratio; optical transmission systems; polarisation-insensitive spot-size converter; Absorption; Bandwidth; Bonding; Couplings; Cutoff frequency; Data communication; Indium phosphide; Parasitic capacitance; Polarization; Signal design;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989108
