DocumentCode
3783019
Title
Simulation of thermal oxidation and diffusion processes by parallel PDE solver L/sub i/SS
Author
W. Joppich;S. Mijalkovic
Author_Institution
German Nat. Res. Center for Comput. Sci., St. Augustin, Germany
fYear
1996
Firstpage
89
Lastpage
90
Abstract
In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, L/sub i/SS, such a tool was developed.
Keywords
"Oxidation","Diffusion processes","Computational modeling","Thermal engineering","Computational geometry","Boron","Multigrid methods","Partial differential equations","Information technology","Scientific computing"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865286
Filename
865286
Link To Document