Author :
Bach, H.-G. ; Schlaak, W. ; Mekonnen, G.G. ; Steingruber, R. ; Seeger, A. ; Passenberg, W. ; Ebert, W. ; Jacumeit, G. ; Eckhard, Th ; Ziegler, R. ; Beling, A. ; Schmauss, A. ; Munk, A. ; Engel, Th. ; Umbach, A.
Abstract :
InP-based PIN TWA photoreceiver OEICs with monolithically integrated taper were fabricated, pack-aged into butt-coupled pig-tailed modules and characterized for 50 GHz operation at λ=1.55 μm. Cascode-type circuit schemes of the integrated travelling wave amplifier were realized for increased conversion gain of up to 85 V/W.
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; modules; optical modulation; optical receivers; p-i-n photodiodes; travelling wave amplifiers; 1.55 micron; 40 Gbit/s; 50 GHz; NRZ modulation format; OEIC; PIN TWA photoreceiver; RZ modulation format; butt-coupled pig-tailed modules; cascode-type circuit schemes; integrated travelling wave amplifier; monolithically integrated taper; photoreceiver modules; spot size converter; Bandwidth; Circuits; Modulation; Optical amplifiers; Optical mixing; Optical receivers; Optical signal processing; Optical waveguides; Packaging; Photodiodes;
