• DocumentCode
    3783248
  • Title

    Photoenhanced wet etching of gallium nitride for gate recessing

  • Author

    J. Skriniarova;A. Fox;P. Bochem;P. Kordos

  • Author_Institution
    Institute of Thin Film and Ion Technology
  • fYear
    2000
  • Firstpage
    13
  • Lastpage
    16
  • Keywords
    "Wet etching","III-V semiconductor materials","Gallium nitride","Surface morphology","Rough surfaces","Surface roughness","MESFETs","Atomic force microscopy","Scanning electron microscopy","HEMTs"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889443
  • Filename
    889443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783248