• DocumentCode
    3783249
  • Title

    Gan-based electronics: material and device issues

  • Author

    P. Kordos

  • Author_Institution
    Institute of Thin Film and Ion Technology (ISI), Research Centre Julich
  • fYear
    2000
  • Firstpage
    47
  • Lastpage
    54
  • Keywords
    "Gallium nitride","HEMTs","MODFETs","Aluminum gallium nitride","Frequency","Photonic band gap","Power generation","Schottky barriers","Wet etching","Optical materials"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889450
  • Filename
    889450
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783249