• DocumentCode
    3783250
  • Title

    Vertical silicon MOSFETs based on selective epitaxial growth

  • Author

    J. Moers;A. Tonnesmann;D. Klaes;L. Vescan;A. van der Hart;A. Fox;M. Marso;P. Kordos;H. Luth

  • Author_Institution
    Institut fur Schicht- und lonentechnik
  • fYear
    2000
  • Firstpage
    67
  • Lastpage
    70
  • Keywords
    "Silicon","MOSFETs","Epitaxial growth","Lithography","Chemicals","Substrates","Annealing","Etching","Parasitic capacitance","Microelectronics"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889454
  • Filename
    889454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783250