On the origin of interface induced charge density in ionized cluster beam deposited metal-semiconductor systems

The disordered interface electronic structure of ICB deposited Schottky structure is calculated using simple models for the metal and semiconductor. It is shown that the origin of the capacitance measurement detected bias dependent charge density can be ascribed to the presence of the disorder induced continuum of the electron states in the semiconductor energy gap and its coupling with the incorporated metal impurity states at the interface between the disordered interlayer and the regular semiconductor.