Title :
Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range
Author :
J. Darmo;F. Schaffer;A. Forster;P. Kordos
Author_Institution :
Max-Planck-Inst. fur Radioastron., Bonn, Germany
Abstract :
Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.
Keywords :
"Gallium arsenide","Frequency","Photodetectors","Molecular beam epitaxial growth","Substrates","Doping","Charge carrier lifetime","Temperature distribution","Charge carriers","Temperature measurement"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889470
