• DocumentCode
    3783265
  • Title

    Study of diamond films prepared by hot filament chemical vapor deposition

  • Author

    A. Kromka;V. Malcher;J. Janik;V. Dubravcova;A. Satka;I. Cerven

  • Author_Institution
    Dept. of Microelectron, Slovak Univ. of Technol., Bratislava, Slovakia
  • fYear
    2000
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    A systematic study of growth rate and quality of polycrystalline diamond films by synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600/spl deg/C show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from [100] to [111] as a results of increased substrate temperature. The surface features of deposited films varied from rectangularto triangular-like structures. The growth rate increased form 0.42 to 0.58 /spl mu/m/h with increasing temperature form 600 to 900/spl deg/C for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.
  • Keywords
    "Chemical vapor deposition","Plasma temperature","X-ray diffraction","Diamond-like carbon","Plasma measurements","Scanning electron microscopy","X-ray scattering","Plasma chemistry","Plasma materials processing","DC generators"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889505
  • Filename
    889505