• DocumentCode
    3783271
  • Title

    Poly Si/Ni(Pt) thin film resistance temperature sensors on GaAs

  • Author

    T. Lalinsky;P. Hrkut;Z. Mozolova;T. Kovacik

  • Author_Institution
    Inst. of Electr. Eng., Czechoslovak Acad. of Sci., Bratislava, Slovakia
  • fYear
    2000
  • Firstpage
    395
  • Lastpage
    398
  • Abstract
    Ni and Pt resistance temperature sensors on GaAs with an interfacial poly Si thin film as a diffusion barrier were prepared and analyzed. An optimal thickness of the poly Si interfacial barrier layer was investigated in relation to the sensor thermal sensitivity and stability. High thermal performance and stability of the temperature sensors were obtained and confirmed by preliminary reliability tests at 150/spl deg/C for times up to 250 hours.
  • Keywords
    "Semiconductor thin films","Thin film sensors","Temperature sensors","Gallium arsenide","Thermal sensors","Thermal stability","Electric resistance","Thermal resistance","Sputtering","Sensor phenomena and characterization"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889529
  • Filename
    889529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783271