DocumentCode :
3783272
Title :
Performance of GaAs photoconductive detectors fabricated from different starting materials
Author :
L. Ryc;B. Surma;F. Dubecky;L. Dobrzanski;A. Hruban;S. Strzelecka;J. Dresner
Author_Institution :
Inst. of Plasma Phys. & Laser Microfusion, Warsaw, Poland
fYear :
2000
Firstpage :
407
Lastpage :
410
Abstract :
Four GaAs photoconducting detectors of the same geometry but from different starting materials (of various producers) have been fabricated and then examined for fast response with the use of pulsed excitation of different duration in the optical and X-ray ranges of radiation. Some new techniques have been used for measuring the time characteristics.
Keywords :
"Gallium arsenide","Photoconductivity","Photoconducting materials","Radiation detectors","X-ray detection","X-ray detectors","Geometrical optics","Optical materials","Optical pulses","Time measurement"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889532
Filename :
889532
Link To Document :
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