Title :
Highly reliable CW strained layer InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW lasers fabricated by MBE
Author :
P. Sajewicz;T. Piwonski;K. Reginski;B. Mroziewicz;M. Bugajski
Author_Institution :
Inst. of Electron. Technol., Warsaw, Poland
Abstract :
Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of J/sub th//spl ap/280 A/cm/sup 2/ (for a resonator length L=700 /spl mu/m) and differential efficiency /spl eta/=0.4 W/A (41%) were obtained. The wall-plug efficiency was 38%. Theoretical estimations of these quantities obtained by numerical modelling of devices were J/sub th/=210 A/cm and /spl eta/=0.47 W/A respectively.
Keywords :
"Indium gallium arsenide","Gallium arsenide","Pump lasers","Quantum well lasers","Molecular beam epitaxial growth","Potential well","Laser excitation","Geometrical optics","Threshold current","Estimation theory"
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889533
